Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies

摘要

Circularly-polarized magneto-photoluminescence (magneto-PL) technique hasbeen applied to investigate Zeeman effect in InAs/InGaAs/InAlAs quantum wells(QWs) in Faraday geometry. Structures with different thickness of the QWbarriers have been studied in magnetic field parallel and tilted with respectto the sample normal. Effective electron-hole g-factor has been found bymeasurement of splitting of polarized magneto-PL lines. Lande factors ofelectrons have been calculated using the 14-band kp method and g-factor ofholes was determined by subtracting the calculated contribution of theelectrons from the effective electron-hole g-factor. Anisotropy of the holeg-factor has been studied applying tilted magnetic field.